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Schottky Barrier Diodes (SBD)
MA3X715 (MA715)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.40+0.10 -0.05 0.16+0.10 -0.06
1.50+0.25 -0.05
Features
* Low forward voltage VF * Optimum for high frequency rectification because of its short reverse recovery time trr
1
3
2.8+0.2 -0.3
2
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05
Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage Maximum peak reverse voltage Forward current Single Double Peak forward current Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 -55 to +125 C C mA Unit V V mA
10
1.1+0.2 -0.1
(0.65)
0 to 0.1
1.1+0.3 -0.1
EIAJ: SC-59
1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 Mini3-G1 Package
Marking Symbol: M2Y Internal Connection
3
Junction temperature Storage temperature
1
2
Electrical Characteristics Ta = 25C 3C
Parameter Forward voltage Symbol VF1 VF2 Reverse current Terminal capacitance Reverse recovery time Detection efficiency
*
Conditions IF = 1 mA IF = 30 mA VR = 30 V VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 VIN = 3 V(peak) , f = 30 MHz RL = 3.9 k, CL = 10 pF
Min
Typ
Max 0.3 1.0 30
Unit V A pF ns %
IR Ct trr
1.5 1.0 65
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit
Bias Application Unit (N-50BU) tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00075CED
0.40.2
5
Publication date: April 2004
1
MA3X715
IF V F
103
104 Ta = 125C
0.8 IF = 30 mA
IR V R
VF Ta
102
Ta = 125C
75C 25C -20C
103
Forward current IF (mA)
Reverse current IR (A)
Forward voltage VF (V)
10
75C 102
0.6
1
10 mA 0.4
25C 10
10-1
10-2
1
0.2 1 mA
10-3
10-1
0
0.8
1.6
2.4
0
10
20
30
0 -40
40
120
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR T a
104
Ct VR
2.0 f = 1 MHz Ta = 25C
102
IF(surge) tW
Ta = 25C IF(surge) tW Non-repetitive 10
102
3V 1V
Terminal capacitance Ct (pF)
103
VR = 30 V
1.0
10
Forward surge current IF(surge) (A)
Reverse current IR (A)
1
1
10-1 -40
40
120
200
0
0
10
20
30
10 -1 10 -2
10 -1
1
10
102
Ambient temperature Ta (C)
Reverse voltage VR (V)
Pulse width tW (ms)
2
SKH00075CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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